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Quality guaranteed We sell only warrantied and traceable partsMfg Part Number: 722906-52
Alternate P/N: 72290652
NSN : 5962-01-111-0444
NIIN : 011110444
CAGE Code : 05869
Manufacturer: Raytheon Company
Item Name : Microcircuit Memory
In our inventory, we have more than two billion new and obsolete NSN part like 722906-52. Aviation Sphere can offer an impressive selection of NSN parts. This includes parts like 722906-52 Microcircuit Memory from manufacturer Raytheon Company and many more, all of which are available with short lead times and competitive prices. For parts not in our inventory, our dedicated account managers can help you track them down through our international supply chain network that extends across the United States, Canada, and the United Kingdom. Furthermore, Aviation Sphere is an AS9120B, ISO 9001:2015, and FAA AC 0056B accredited business, as well as the only independent distributor with a strict No China Sourcing Pledge, allowing us to ensure that each part part like 722906-52, you purchase from us is fully traceable or comes directly from its manufacturer.
Our website offers a number of parametric search capabilities, one of which allows you to search specifically for NSN part like 722906-52. This means you can quickly sort through National Stock Numbers such as 5962011110444 and find parts from quality manufacturers like Raytheon Company and many others. To begin the purchasing process immediately, submit an RFQ today. Our team of dedicated account managers is standing by and will respond to all inquiries in 15 minutes or less.
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 755 INCHES MINIMUM AND 0 785 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 302 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 145 INCHES MINIMUM AND 0 175 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING500 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND WENABLE AND PROGRAMMABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CRHL | BIT QUANTITY2048 |
| MEMORY | CSWJ | WORD QUANTITY512 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 60 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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