Mfg Part Number: CY6116-55LMB
Alternate P/N: CY611655LMB
NSN : 5962-01-302-0502
NIIN : 013020502
CAGE Code : 61772
Manufacturer: Integrated Device Technology Inc
Item Name : Microcircuit Memory
In our inventory, we have more than two billion new and obsolete NSN part like CY6116-55LMB. Aviation Sphere can offer an impressive selection of NSN parts. This includes parts like CY6116-55LMB Microcircuit Memory from manufacturer Integrated Device Technology Inc and many more, all of which are available with short lead times and competitive prices. For parts not in our inventory, our dedicated account managers can help you track them down through our international supply chain network that extends across the United States, Canada, and the United Kingdom. Furthermore, Aviation Sphere is an AS9120B, ISO 9001:2015, and FAA AC 0056B accredited business, as well as the only independent distributor with a strict No China Sourcing Pledge, allowing us to ensure that each part part like CY6116-55LMB, you purchase from us is fully traceable or comes directly from its manufacturer.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-302-0502 Item Description: Microcircuit Memory | 5962 | 013020502 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Cy6116-55lmb | 5 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 460 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 100 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND WENABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN22 INPUT |
MEMORY | CRHL | BIT QUANTITY16384 |
MEMORY | CSWJ | WORD QUANTITY2048 |
MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 55 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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