Mfg Part Number: OW6264CC3-15
Alternate P/N: OW6264CC315
NSN : 5962-01-233-3489
NIIN : 012333489
CAGE Code : 61271
Manufacturer: Fujitsu Microelectronics Inc
Item Name : Microcircuit Memory
In our inventory, we have more than two billion new and obsolete NSN part like OW6264CC3-15. Aviation Sphere can offer an impressive selection of NSN parts. This includes parts like OW6264CC3-15 Microcircuit Memory from manufacturer Fujitsu Microelectronics Inc and many more, all of which are available with short lead times and competitive prices. For parts not in our inventory, our dedicated account managers can help you track them down through our international supply chain network that extends across the United States, Canada, and the United Kingdom. Furthermore, Aviation Sphere is an AS9120B, ISO 9001:2015, and FAA AC 0056B accredited business, as well as the only independent distributor with a strict No China Sourcing Pledge, allowing us to ensure that each part part like OW6264CC3-15, you purchase from us is fully traceable or comes directly from its manufacturer.
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NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
---|---|---|---|---|---|---|
5962-01-233-3489 Item Description: Microcircuit Memory | 5962 | 012333489 | 0 | N | D | |
CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
7 | D | A | 0 | |||
Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
Ow6264cc3-15 | 2 | 1 | 5 |
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 560 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 460 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 045 INCHES NOMINAL |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING495 0 MILLIWATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND LOW POWER |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN25 INPUT |
MEMORY | CRHL | BIT QUANTITY65536 |
MEMORY | CSWJ | WORD QUANTITY8192 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 150 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 LEADLESS |
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