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332962-1 with NSN 5962-01-159-7882 by Bae Systems Information And Electronic Systems Integration Inc - Buy Now

Mfg Part Number: 332962-1

Alternate P/N: 3329621

NSN : 5962-01-159-7882

NIIN : 011597882

CAGE Code : 80249

Manufacturer: Bae Systems Information And Electronic Systems Integration Inc

Item Name : Microcircuit Memory

FSC : 5962 Microcircuits Electronic

In our inventory, we have more than two billion new and obsolete NSN part like 332962-1. Aviation Sphere can offer an impressive selection of NSN parts. This includes parts like 332962-1 Microcircuit Memory from manufacturer Bae Systems Information And Electronic Systems Integration Inc and many more, all of which are available with short lead times and competitive prices. For parts not in our inventory, our dedicated account managers can help you track them down through our international supply chain network that extends across the United States, Canada, and the United Kingdom. Furthermore, Aviation Sphere is an AS9120B, ISO 9001:2015, and FAA AC 0056B accredited business, as well as the only independent distributor with a strict No China Sourcing Pledge, allowing us to ensure that each part part like 332962-1, you purchase from us is fully traceable or comes directly from its manufacturer.

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NSN Information for Part Number 332962-1 with NSN 5962-01-159-7882, 5962011597882

NSN	FSC	NIIN	CLS	Hazmat	DEMIL	Cancelled NSN
5962-01-159-7882 Item Description: Microcircuit Memory	5962	011597882	0	N	B
	CIIC	HCC	ESD	PMIC	Criticality	ENAC
	U		B	A	0
Part Number	ISC	RNVC	RNCC	HCC	MSDS	SADC
332962-1	1	1	C			A

Characteristics Data of NSN 5962-01-159-7882, 5962011597882

MRC	Criteria	Characteristic
MEMORY	ADAQ	BODY LENGTH0 840 INCHES MAXIMUM
MEMORY	ADAT	BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM
MEMORY	ADAU	BODY HEIGHT0 185 INCHES MAXIMUM
MEMORY	AEHX	MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS
MEMORY	AFGA	OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORY	AFJQ	STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORY	CBBL	FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC AND WOPEN COLLECTOR
MEMORY	CQSJ	INCLOSURE MATERIALCERAMIC AND GLASS
MEMORY	CQSZ	INCLOSURE CONFIGURATIONDUAL-IN-LINE
MEMORY	CQWX	OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORY	CQZP	INPUT CIRCUIT PATTERN10 INPUT
MEMORY	CTFT	CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510
MEMORY	CWSG	TERMINAL SURFACE TREATMENTSOLDER
MEMORY	CZEN	VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM INPUT
MEMORY	CZEQ	TIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORY	CZER	MEMORY DEVICE TYPEPROM
MEMORY	CZZZ	MEMORY CAPACITYUNKNOWN
MEMORY	TEST	TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI
MEMORY	TTQY	TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
MEMORY	ZZZK	SPECIFICATIONSTANDARD DATA81349-MIL-M-38510203 GOVERNMENT SPECIFICATION

332-00-13	332-000-00	332-000-00	332-000-0001
332-000-0001	332-000-0001	332-000-0002	332-000-001L000
332-000-001L999	332-000-002L000	332-000-002L999	332-000-003L000
332-000-003L999	332-000-004L000	332-000-004L999	332-000-005L000
332-000-005L999	332-000-G0G0-330J	332-000-G0G0-330J	332-000-U2J0-1150R
332-000-U2J0-1150R	332-000-X5U0-202M	332-000-X5U0-202M	332-000-X5V0-472P
332-000-X5V0-472P	332-000-X5V0-472P	332-0000	332-0000
332-0001	332-0001-00	332-0001-000	332-0001-000